This webinar presents techniques for high power characterization of Silicon Carbide (SiC) and Gallium Nitride (GaN) components. We look at power levels as high as 2000W and electrical levels of up to 3,000V or 100A.
Duration 44:39
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This webinar presents techniques for high power characterization of Silicon Carbide (SiC) and Gallium Nitride (GaN) components. We look at power levels as high as 2000W and electrical levels of up to 3,000V or 100A.
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