This webinar presents techniques for high power characterization of Silicon Carbide (SiC) and Gallium Nitride (GaN) components. We look at power levels as high as 2000W and electrical levels of up to 3,000V or 100A.
期間 44:39
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SiC- GaN Components - 5 Key Tests
期間 44:39
Nanoseconds or Nanometers Going for Single Digits with Next-Generation Semiconductor Technologies
期間 41m 41s
Creating a Battery Discharge Model with a 2450 Source Measure Unit and Simulating the Battery with t
期間 4m 15s
Short Demonstration of How the 2281S Battery Simulator Emulates a Battery and How the 2450 Source Me
期間 7m 10s
