This webinar presents techniques for high power characterization of Silicon Carbide (SiC) and Gallium Nitride (GaN) components. We look at power levels as high as 2000W and electrical levels of up to 3,000V or 100A.
期間 44:39
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與 Tek 業務代表即時對談。 上班時間:上午 6:00 - 下午 4:30 (太平洋時間)
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與 Tek 業務代表即時對談。 上班時間:上午 8:30 - 下午 5:30 (太平洋時間)
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This webinar presents techniques for high power characterization of Silicon Carbide (SiC) and Gallium Nitride (GaN) components. We look at power levels as high as 2000W and electrical levels of up to 3,000V or 100A.