Silicon carbide (SiC) MOSFETs are supplanting silicon IGBTs in the drivetrain inverter of battery electric vehicles. While today SiC claims only around 5% of the market, with the vast majority of car manufacturers having an SiC inverter development program, projections for the SiC to be in the majority of new inverters by the end of the decade appear well founded. In this talk we will discuss the cocktail of materials characteristics that result in SiC claiming the tag as a high voltage, fast switching, high temperature power semiconductor. However, we will also look at the challenges that remain, particularly in driving down costs across the SiC supply chain, whereby innovation in the substrate market, combined with gradual improvements in fabrication yield and device processing will drive down costs over the coming years.
期間 30:07
