Power Semiconductor Device Testing

From the early stages of design to the point when it’s ready for market, a new power device undergoes a gamut of test and characterization activities, and you face many steps in bringing that device to market, including:

Designing new devices to meet evolving needs
Characterizing full performance of new designs
Preparing the device for production
Meeting reliability standards for commercial use
Implementing the device in actual designs
Evaluating existing devices and designs for new application requirements

Get our e-Guide and learn how to overcome the challenges posed by each stage of the power semi device life cycle.

Featured Content

Testing High Power Semiconductor Devices from Inception to Market

Methods for Efficient, Flexible Test and Characterization throughout the Life Cycle of a Power Semi Device

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Creating Multi-SMU Systems with High Power System SourceMeter Instruments Application Note

The design and configuration of test systems for DC characterization of power semiconductor devices using high voltage and high current source measurement units

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How to perform a simple breakdown test

How to perform a simple breakdown test on a high power, high voltage IGBT device - Using Keithley's NEW Model 2657A High Power System SourceMeter Instrument AND the Model 8010 High Power Device Test Fixture

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Library

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IsoVu Generation 2 Technology White Paper This white paper describes the theory of operation and performance capabilities of an optically isolated measurement system that offers complete galvanic isolation to accurately resolve high bandwidth …
Measuring Vgs on Wide Bandgap Semiconductors This application note shows a procedure for achieving accurate measurements of gate-to-source voltage on high-side (ungrounded) FETs using the IsoVu measurement system.
Achieving Fast Pulse Measurements for Today's High Power Devices - Application Brief
Creating Multi-SMU Systems with High Power System SourceMeter Instruments Application Note
Testing to 100A by Combining Keithley Model 2651A High Power SourceMeter Instruments (Application Brief)
Protecting Parametric Test Systems and the Test Environment from Damaging Transient Overvoltages and Overcurrents Measuring breakdown parameters is increasingly required to predict a device’s safe region of operation. Sometimes, those breakdown conditions in reliability testing and breakdown test occur as a …
Testing to 100A by Combining Keithley Model 2651A High Power SourceMeter Instruments (Application Note) Introduction Source-measure units (SMUs), such as the Keithley Model 2651A High Power System SourceMeter instrument, are the most flexible and most precise equipment for …
Double Pulse Testing for Power Semiconductor Devices with an Oscilloscope and Arbitrary Function Generator Introduction Semiconductor materials used in power electronics are transitioning from silicon to wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) due …

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Wide Bandgap Applications Wide Bandgap power devices (SiC and GaN) offer significant benefits and are smaller, faster and more efficient than their silicon counterpart. But they also present several validation challenges …
Simplify Component Selection with Robust DC Characterization Watch this webinar to get tips for measuring 2- and 3-terminal semiconductor devices and for using source measure unit instruments during the design process.
SiC- GaN Components - 5 Key Tests This webinar presents techniques for high power characterization of Silicon Carbide (SiC) and Gallium Nitride (GaN) components. We look at power levels as high as 2000W and electrical levels of up to …