Introduction
The Semiconductor Industry is always searching for new special materials, dielectric solutions, and new device geometries for scaling down the device size further and further. Lateral and vertical heterostructures of 2D materials, for instance, have led to new revolutionary tiny and low-power electronics.
A 4200A Electrical Parameter Characterization system controlled from his …
After years of research and design, Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices are becoming more viable. But, these devices, though high performance, come with challenges, including gate drive requirements. SiC requires much higher gate voltage (Vgs) with a negative bias for turn off. GaN, on the other hand, has much lower threshold voltage (Vth), requiring tight gate drive …
Silicon Carbide and Gallium Nitride demand for 5G, automotive, and energy systems is rising.
Design complexity is increasing; the time to market window continues to shrink.
It’s increasingly harder to ensure that designs meet demanding specifications and compliance requirements.
Does this sound all too familiar to you? While we take so much for granted, many engineers and scientists are working …
