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Tag: #SEMICONDUCTORS

Posts

Alignment waveform used to find and remove skew for double pulse testing
A New Software Deskew Approach Accelerates Double Pulse Testing Tuesday, September 12, 2023
Accurate energy loss measurements are one of the key objectives of double pulse testing. Eliminating the timing skew between voltage and current probes is a critical step in making accurate power and energy measurements on an oscilloscope. The double pulse testing software (WBG-DPT), available on the 4 Series, 5 Series and 6 Series MSOs, includes a new deskew technology designed specifically for …
Tektronix 2 Series MSO touchscreen oscilloscope
Benchtop Oscilloscope Innovation with the New 2 Series MSO Tuesday, June 7, 2022
Introducing the 2 Series MSO (Mixed Signal Oscilloscope) Tektronix’ 2 Series MSO (Mixed Signal Oscilloscope) is the industry’s most compact and versatile bench oscilloscope, featuring a modern design, intuitive user interface, advanced debugging capabilities, bandwidth up to 500 MHz, and a battery-powered option. This is the first benchtop scope that goes wherever it’s needed, from lab to field …
5 series mixed signal oscilloscope with a Tektronix IsoVu probe
Best Practices When Handling Tektronix IsoVu Isolated Differential Probes Monday, December 20, 2021
In this article, we will explore in detail some best practices to follow when handling Tektronix's isolated differential probe, also known as IsoVu™ probes. What is IsoVu?  IsoVu is the brand name used to describe Tektronix's isolated differential probes. Generation One (TIVHx/TIVMx) was released several years ago, and Generation Two (TIVPx) came out more recently. IsoVu probes were originally …
How Does the New Generation Memory – DDR5 – Change Things? Monday, May 3, 2021
From augmented reality to artificial intelligence, cloud computing to IoT, 5G is fueling growth in new technologies – and the data they create. With more and more data comes the need for storage and fast access which means that technology like DDR5 has never been more important. The need for data centers to continuously store, transfer and process this data pushes the limits of high-speed …
4200A Electrical Parameter Characterization system controlled from his touchscreen display
MOSFETs Characterization in the Low Power Range Wednesday, March 25, 2020
Introduction The Semiconductor Industry is always searching for new special materials, dielectric solutions, and new device geometries for scaling down the device size further and further. Lateral and vertical heterostructures of 2D materials, for instance, have led to new revolutionary tiny and low-power electronics. A 4200A Electrical Parameter Characterization system controlled from his …
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Performing Breakdown Voltage and Leakage Current Measurements on Today’s High Voltage Semiconductor Devices Wednesday, September 11, 2019
After years of research and design, Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices are becoming more viable.  But, these devices, though high performance, come with challenges, including gate drive requirements.   SiC requires much higher gate voltage (Vgs) with a negative bias for turn off.  GaN, on the other hand, has much lower threshold voltage (Vth), requiring tight gate drive …
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Are You Making the Big ‘Power’ Switch to SiC and GaN? Wednesday, May 15, 2019
Silicon Carbide and Gallium Nitride demand for 5G, automotive, and energy systems is rising. Design complexity is increasing; the time to market window continues to shrink. It’s increasingly harder to ensure that designs meet demanding specifications and compliance requirements. Does this sound all too familiar to you? While we take so much for granted, many engineers and scientists are working …

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