Introduction

Semiconductor materials used in power electronics are transitioning from silicon to wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) due to their superior performance in many applications. Wide bandgap switching devices enable smaller, faster and more efficient designs. The power-density advantages of smaller and lighter designs are particularly evident in space constrained and mobile products such as electric vehicles, but compact power electronics are desirable across a wide range of products. At the same time, efficiency is increasingly important as governments introduce financial incentives and more stringent energy-efficiency regulations.