Keithley 4200A-SCS Parameter Analyzer

Keithley 4200A-SCS Parameter Analyzer

Accelerate research, reliability and failure analysis studies of semiconductor devices, materials and process development with the 4200A-SCS. The highest performance parameter analyzer, it delivers synchronizing current-voltage (I-V), capacitance-voltage (C-V) and ultra-fast pulsed I-V measurements.

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DC Current-Voltage
(I-V) Range

10 aA - 1A
0.2 µV - 210 V

Capacitance-Voltage
(C-V) Range

1 kHz - 10 MHz
± 30V DC bias

Pulsed I-V
Range

±40 V (80 V p-p), ±800 mA
200 MSa/sec, 5 ns sampling rate

 

Keithley 4200A-SCS Parameter Analyzer

Parametric insight, fast and clear.

4200a-parameter-analyzer-MOSFET.jpg

Making connections to your bold discoveries has never been easier. The 4200A-SCS Parameter Analyzer reduces characterization complexity and test setup by up to 50%, providing clear, uncompromised measurement and analysis capability. Plus, embedded measurement expertise—an industry first—provides test guidance and gives you supreme confidence in your results.

Highlights

  • Built-in measurement videos in English, Chinese, Japanese, and Korean
  • Jump start your testing with hundreds of user-modifiable application tests
  • Automated real-time parameter extraction, data graphing, arithmetic functions

Measure. Switch. Repeat.

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The 4200A-CVIV Multi-Switch automatically switches between I-V and C-V measurements without re-cabling or lifting the prober tips. Unlike competing products, the four-channel 4200A-CVIV display provides local visual insight for quick test setup and easy troubleshooting when unexpected results occur.

Highlights

  • Move C-V measurement to any device terminal without re-cabling
  • User-configurable for low current capability
  • Personalize the names of output channels
  • View real-time test status

Characterize. Customize. Maximize.

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Put simply, the 4200A-SCS is completely customizable and fully upgradeable so you can perform electrical characterization and evaluation of semiconductor devices, new materials, active/passive components, wafer level reliability, failure analysis, electrochemistry or virtually any type of sample.

Highlights

  • NBTI/PBTI testing
  • Random telegraph noise
  • Non-volatile memory devices
  • Potentiostat application tests

Integrated solution with analytical probers and cryogenic controllers.

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The 4200A-SCS Parameter Analyzer supports many manual and semi-automated wafer probers and cryogenic temperature controllers, including Cascade MicroTech, Lucas Labs/Signatone, MicroManipulator, Wentworth Laboratories, LakeShore Model 336 cryogenic temperature controller.

Highlights

  • "Point and click" test sequencing
  • "Manual" prober mode tests prober functionality
  • Fake prober mode enables debugging without removing commands

 

Models

Model Current-Voltage (I-V) Range Capacitance-Voltage (C-V) Range Pulsed I-V Range List Price
4200A-SCS 10 aA - 1A
0.2 µV – 210 V
1 kHz – 10 MHz
± 30V DC bias
±40 V (80 V p-p), ±800 mA
200 MSa/sec, 5 ns sampling rate
Configure & Quote
Model4200A-SCS
Current-Voltage (I-V) RangeCapacitance-Voltage (C-V) RangePulsed I-V Range
10 aA - 1A<br> 0.2 µV – 210 V1 kHz – 10 MHz<br>± 30V DC bias±40 V (80 V p-p), ±800 mA<br> 200 MSa/sec, 5 ns sampling rate
Model Current-Voltage (I-V) Range Capacitance-Voltage (C-V) Range Pulsed I-V Range List Price
4200A-SCS 10 aA - 1A
0.2 µV – 210 V
1 kHz – 10 MHz
± 30V DC bias
±40 V (80 V p-p), ±800 mA
200 MSa/sec, 5 ns sampling rate
Configure & Quote
Model4200A-SCS
Current-Voltage (I-V) RangeCapacitance-Voltage (C-V) RangePulsed I-V Range
10 aA - 1A<br> 0.2 µV – 210 V1 kHz – 10 MHz<br>± 30V DC bias±40 V (80 V p-p), ±800 mA<br> 200 MSa/sec, 5 ns sampling rate

Semiconductor Reliability

Perform complex reliability tests while letting the 4200A-SCS take care of the complex coding. Included projects like Hot Carrier Injection Degradation (HCI) give you a jump start on device analysis.

Highlights

  • Combine DC I-V, C-V, and pulse measurements in one set of tests
  • Included support for many probe stations and external instruments
  • Easy to use cycling system allows repeat measurements without coding

C-V Measurement for High Impedance Applications

Use Keithley’s custom Very Low Frequency C-V Technique to analyze the capacitance of your high resistance sample. This technique is performed using only source measure unit (SMU) instruments but can be combined with a 4210-CVU to perform higher frequency measurements as well.

Highlights

  • .01 to 10 Hz frequency range with sensitivity of 1 pF to 10 nF
  • 3½-digit typical resolution, minimum typical of 10 fF

Non-volatile Memory

Put your new technologies to the test with thorough pulsed I-V characterization. The 4200A-SCS comes with support and ready-to-run tests for the latest in NVRAM technologies from floating gate flash to ReRAM and FeRAM. Dual sourcing and measuring capabilities in current and voltage allow both transient and I-V domain characterization.

VCSEL Testing

Multiple, concurrent source measure unit (SMU) instruments in the 4200A-SCS simplify your laser diode testing. Generate LIV (Light intensity-Current-Voltage) curves with connections to only a single box. Advanced probe station and switch support means you can use the same instrument for on-wafer production testing of individual diodes or entire arrays. SMUs can be configured for up to 21 W capabilities for a variety of continuous wave (CW) VCSEL applications.

Nanoscale Device Characterization

The integrated instrument capabilities of the 4200A-SCS simplify the measurement requirements in developing nanoscale electronics such as carbon nanotubes. Start your investigations from a preconfigured test project and expand your work from there. A pulsed source mode for SMUs helps reduce overheating problems can be combined with low voltage C-V and ultra-fast pulsed DC measurements in seconds.

Resistivity of Materials

Use a 4200A-SCS with integrated SMUs to easily measure resistivity using a four-point collinear probe or van der Pauw method. Included tests perform repetitive van der Pauw calculations automatically, saving you valuable research time. A maximum current resolution of 10aA and input impedance of >10­­­­16 ohms give you more accurate and precise results.

MOSFET Characterization

The 4200A-SCS can hold all the instruments necessary for full characterization of MOS devices through component or on-wafer testing. Included tests and projects solve for oxide thickness of a MOSCap, threshold voltages, doping concentration, mobile ion concentration, and more. All these tests can be run at the touch of a button from a single instrument box.

Datasheet Model Description Pricing
View Datasheet 4200A-SCS-PK1
High Resolution IV
210V/100mA, 0.1 fA resolution
For two- and three-terminal devices, MOSFET, CMOS characterization Package 4200A-SCS-PK1 includes:
  • 4200A-SCS parameter analyzer
  • (2) 4200-SMU Module
  • (1) 4200-PA Preamp
  • (1) 8101-PIV Test fixture with sample devices
Request a Quote
View Datasheet 4200A-SCS-PK2
High Resolution IV & CV
210V/100mA, 0.1 fA resolution, 1kHz - 10MHz
For high κ dielectric, deep submicron CMOS characterization Package 4200A-SCS-PK2 includes:
  • 4200A-SCS parameter analyzer
  • (2) 4200-SMU Module
  • (1) 4200-PA Preamp
  • (1) 4210-CVU Capacitance-Voltage Module
  • (1) 8101-PIV Test fixture with sample devices
Request a Quote
View Datasheet 4200A-SCS-PK3
High Resolution and Power IV & CV
210V/1A, 0.1 fA resolution, 1kHz - 10MHz
For power devices, high κ dielectric, deep submicron CMOS device characterization Package 4200A-SCS-PK3 includes:
  • 4200A-SCS parameter analyzer
  • (2) 4200-SMU Module
  • (2) 4210-SMU
  • (1) 4200-PA Preamp
  • (1) 4210-CVU Capacitance-Voltage Module
  • (1) 8101-PIV Test fixture with sample devices
Request a Quote
View Datasheet 4200-BTI-A
Ultra-fast NBTI/PBTI
For sophisticated NBTI and PBTI measurements on leading-edge silicon CMOS technology Package 4200-BTI-A includes:
  • (1) 4225-PMU Ultra-Fast I-V Module
  • (2) 4225-RPM Remote Preamplifier/Switch Modules
  • Automated Characterization Suite (ACS) Software
  • Ultra-Fast BTI Test Project Module
  • Cabling
Request a Quote

 

Data SheetModuleDescriptionConfigure and Quote
4200-BTI-A ULTRA FAST BTI PKG Configure & Quote
4200-PA REMOTE PREAMPLIFIER MODULE Configure & Quote
4200-SMU MEDIUM POWER SOURCE-MEASURE UNIT Configure & Quote
4200A-CVIV I-V/C-V MULTI-SWITCH MODULE Configure & Quote
4210-CVU CAPACITANCE-VOLTAGE UNIT Configure & Quote
4210-SMU HIGH POWER SOURCE-MEASURE UNIT Configure & Quote
4220-PGU HIGH VOLTAGE PULSE GENERATOR UNIT Configure & Quote
4225-PMU ULTRA-FAST PULSE MEASURE UNIT Configure & Quote
4225-RPM REMOTE PREAMPLIFIER/SWITCH MODULE Configure & Quote
4200-BTI-A ULTRA FAST BTI PKG Configure & Quote
4200-BTI-A ULTRA FAST BTI PKG Configure & Quote
TitleTypeDate
Discover Today's Solutions for Tomorrow's Nano Characterization Challenges
Keithley is helping advance the state of the art in a growing list of nanotechnology applications.  Our solutions for investigating new material and device properties are designed for intuitive operation, so you’ll get the results you need quickly and…
Brochure 04 Feb 2017
Keithley Pulse Solutions
This guide is designed to help you identify Keithley solutions that include pulse sources that might suit your application's requirements.
Brochure 04 Feb 2017
Advances in Electrical Measurements for Nanotechnology E-Handbook
Fact Sheet 04 Feb 2017
DC Electrical Characterization of RF Power Transistors
This application note provides an overview of DC characterization of the RF transistors most commonly used in the communications industry. Despite the rapid development of new amplifier designs and materials, it is interesting to note that the…
Application Note 04 Feb 2017
Pulse I-V Characterization of Non-Volatile Memory Technologies
After a discussion of emerging test requirements, this note provides an overview of the NVM projects, tests, and parameters for testing floatinggate flash, phase-change cell, ferro-electric cell devices, andresistive memory.
Literature number: 1KW-60638-0
Application Note 06 Sep 2016
METHODS AND TECHNIQUES FOR SEMICONDUCTOR CHARACTERIZATION
4200A-SCS PARAMATER ANALYZER APPLICATIONS GUIDEThis Semiconductor Characterization Applications Guide offers tips and techniques for insight and understanding of DC semiconductor device performance to help you tackle the challenges that can impede your measurements and introduce errors.
Literature number: 1KW-60825-0
Application Note 01 Sep 2016
Performing Very Low Frequency Capacitance-Voltage Measurements on High Impedance Devices Using the 4200A-SCS Parameter Analyzer
This application note describes the VLF C-V technique, explains how to make connections to the device under test (DUT,) shows how to use the provided software, and describes optimizing VLF C-V measurements using the Keithley 4200A-SCS Parameter Analyzer.
Literature number: 1KW-60644-0
Application Note 01 Sep 2016
Using the Ramp Rate Method for Making Quasistatic C-V Measurements with the 4200A-SCS Parameter Analyzer
This application note describes how to implement and optimize quasistatic C-V measurements using the 4200A-SCS and the ramp rate method.
Literature number: 1KW-60639-0
Application Note 01 Sep 2016
van der Pauw and Hall Voltage Measurements with the 4200A-SCS Parameter Analyzer
This application note explains how to make resistivity measurements of semiconductor materials using the 4200A-SCS and the van der Pauw method.
Literature number: 1KW-60641-0
Application Note 01 Sep 2016
Optimizing Low Current Measurements with the 4200A-SCS Parameter Analyzer
This application note describes Keithley’s best known methods and recommendations for optimizing low current measurements using the 4200A-SCS.
Literature number: 1KW-60636-0
Application Note 01 Sep 2016
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