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Power Sequence for GaN HEMT Characterization


In order to measure the I-V characteristics of gallium nitride (GaN) high electron mobility transistor (HEMT), a special power sequence is required to prevent unexpected damage during IV evaluation. The tools to capture the I-V curve must equip the function for a specific sequence. Keithley’s Automated Characterization Software (ACS) gives the ability to perform power sequencing for a GaN HEMT characterization of a device without damaging it and to capture its intrinsic I-V characteristics.