PSPL5865 Datasheet

PSPL5865 12.5 Gb/s Driver Amplifier Datasheet

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The Model PSPL5865 Driver Amplifier is intended for use driving Lithium Niobate modulators or as a linear amplifier. This device includes internal temperature compensation for excellent output stability over temperature, and exhibits both high output and low power dissipation. It also incorporates internal sequencing circuitry, making it insensitive to power supply application sequence.

Key performance specifications
  • 7.5 V output amplitude 12.5 Gb/s Modulator Driver
  • Linear amplifier with 26 dB gain
  • 30 kHz to 12 GHz bandwidth
  • Temperature compensated design for output stability
  • Includes bias network, crossing point control & adjustable output voltage

Typical 10.66 Gb/s eye measurements


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Input from Tektronix PPG1601, PRBS=223–1, 500 mv



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Output amplitude > 8 V


Instructions for use

The PSPL5865 12.5 Gb/s modulator driver can be operated using only three of the available 7 pins. The DC pins required for operation are 1, 3, and 7. The connectors and pins are shown in the following diagram and table. Warning: To prevent damage to the PSPL5865, a ground connection is required at pin 7 before applying voltage to the PSPL5865.

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Pin # Pin Lable Description
  IN SMA, signal input, Vamp≤ 1.5 V (damage threshold)
+V Positive DC voltage supply, 8 V () 12
GC Vgc, Variable output control, -15 V≤Vgc≤ 0 V 3
-V Negative DC voltage supply, -5.25 V ≤ V ≤ -4.75 V 4
CP Crossing point adjust, -5 V ≤ Vcp 5 V 5
VB DC Voltage bias, -17 ≤ VB +33  6
NC No connection / Not used
GND Ground connection
  OUT SMA, signal output

1 At 8V, approximately 2.3 W is dissipated.

2 No power sequencing is necessary. Voltages may be applied in any order after ground is applied.

3 Output Control: With VGC at 0 V, or left floating (disconnected), the driver will provide maximum gain and maximum output voltage. The user may decrease VGC to decrease the RF signal gain when the driver is operating in the linear regime, or to reduce the output voltage level when the driver is operated in saturation (this will also reduce the power dissipated).

4 No power sequencing is necessary. Voltages can be applied in any order after ground is applied.

5 The crossing point may vary until unit achieves thermal equilibrium. VCP > 0 V will lower the output crossing point and increase power dissipation. Care must be taken to ensure that the positive supply current does not exceed 320 mA.

6 Voltage Bias: The VB pin allows the user to apply a low current (less than 3.5 mA) DC offset to the Signal Output for biasing electro-optic modulators through a 2.5 kΩ resistor.

Typical performance

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Typical performance plots

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Specifications

Parameter Symbol Units Minimum Typical Maximum Comments
Impedance Z Ohms   50     
Upper 3 dB freq. fc,h GHz   12    Relative to gain at 2 GHz
Lower 3 dB freq. fc,I kHz   30    Relative to gain at 2 GHz
Small signal gain S21 dB   26.5    Measured at 2 GHz
Max Power Out
(-1 dB gain comp)
P1 dB dBm   23.5    Measured at 2 GHz
Output Eye Voltage
with VGC = 0 V
VOUT Vamp 7.0  7.5    Vin = 0.5 Vamp, 12.5 Gb/s PRBS
Output Eye Voltage
with VGC = -15 V
VOUT Vamp   1.0  2.0  Vin = 0.5 Vamp, 12.5 Gb/s PRBS
Return Loss, Input and Output S11
S22
dB   -14 
-11 
-12 
-9 
50 MHz 5 GHz ≤ f
Rise Time tr ps   22  28  20-80%,Vin = 0.5 Vamp, 12.5 Gb/s PRBS
Fall Time tf ps   24  30 
Additive Jitter
   RMS
   Peak-to-Peak
   
ps
pspp
   
0.7 
 
2.0 
  Vin = 0.5 Vamp, 12.5 Gb/s PRBS, measured at crossing point
Overshoot   %     12.5 Gb/s PRBS
Undershoot   %     12.5 Gb/s PRBS
Eff. Input RMS Noise Voltage   μV rms   120     
Noise Figure NF dB   5.75  6.5  f = 1 GHz
Output Eye Voltage Variation Δ VOUT %   +/-3  +/-5  Vgc = 0 V, Vin = 0.5 V amp, TCASE = -5 to 75 °C
Crossing Point Adjust   % +/- 15  +/- 20    +/- 5 V input at Vcp, Vin = 0.5  Vamp
Crossing Point Variation   %   +/- 1.0  +/- 2.0  Vin = 0.5 Vamp, 12.5 Gb/s PRBS, TCASE = -5 to 75 °C
Polarity Non-Inverting
Coupling AC, input and output
RF Connectors SMA jacks (f)
DC Connector Solder pins
Voltage Supply (+) +VDC V 8.25   
Voltage Supply (-) -VDC V -5.25  -5  -4.75   
Supply Current (+) +IDC mA   275    Vout = 7.5 Vamp 1
Supply Current (-) -IDC mA   20     
Power Dissipation Pdiss W   2.3  2.6  Vout = 7.5 Vamp 2
Max Allowed Input   Vamp     1.5  Input damage threshold
Output Voltage Bias Vbias VDC -17  33  No connection required 3
Gain Control Bias Vgc VDC -15  No connection required
Crossing Point Bias Vcp VDC -5  No connection required
Operating Temp TCASE Deg C -5    75  Case temperature
Storage Temp Tstor Deg C -40    125   
Warranty One Year

1 The PSPL5865 may be damaged by excessive heat that is produced when driving low duty cycle positive pulses. To ensure the amplifier will not be damaged by overheating, it is recommended the positive supply voltage has its current limit set to 320 mA.

2 Vgc may be utilized to lower the output level and power dissipated. Vcp > 0 V will lower the crossing point and increase the power dissipated.

3 A 2.5 kΩ resistor is connected to the output from the Vbias pin for adding a low current (≤ 3.5 mA) DC bias

Mechanical dimensions
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Ordering information

Models
PSPL5865
Driver Amplifier, 12.5 Gb/s
Last Modified: 2015-09-08 05:00:00
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