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A 25-Year Legacy of Oscilloscope Probe Innovation Tuesday, March 3, 2020
At Tektronix, we know one of the best ways to help our customers innovate is to innovate ourselves. The infographic below explores our legacy of developing cutting-edge probe technology in the last 25 years. From 1994 – 2004, we were awarded a number of patents for improving low voltage single-ended, low voltage differential, and current probes. Between 2004 and 2014, we also focused our research …
Accurate measurements on your power converters begin with your probe tip Thursday, September 12, 2019
  One of the biggest challenges power electronic designers face is connecting probes to circuit boards, maintaining both electrical and mechanical integrity.  As components and modules continue to become smaller and smaller, the connectivity challenge will only become more difficult. How will you face this challenge? This blog will explore some of the current challenges in connectivity and some …
What is an Oscilloscope Probe? Thursday, August 29, 2019
An oscilloscope probe is a device that makes a physical and electrical connection between a test point or signal source and an oscilloscope. Depending on your measurement needs, this connection can be made with something as simple as a length of wire or with something as sophisticated as an active differential probe. Essentially, a probe is some sort of device or network that connects the signal …
Tektronix to Demonstrate Wide Bandgap Power Solutions at APEC 2019
Tektronix to Demonstrate Wide Bandgap Power Solutions at APEC 2019 Saturday, March 16, 2019
The big news for Tektronix at the APEC 2019 Conference next week will be a new solutions kit for SiC MOSFET and GaN FET switching power conversion testing. Tektronix offers the only solution on the market that can accurately characterize all the critical parameters for optimizing power electronics topologies that use wide bandgap Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductors …
Get to market faster with your SiC and GaN based design
Get to market faster with your SiC and GaN based design Tuesday, March 12, 2019
Are your GaN HEMTs and SiC MOSFETs blowing up? Are faster switching speeds on your power devices causing ringing and shootthroughs that you cannot debug? Are you having trouble optimizing gate drive performance and deadtime on your half-bridge circuits? Are you having trouble making GaN HEMT or SiC MOSFET perform just right? Are you having trouble getting the promised efficiency performance from …

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